Charged beam exposure apparatus having blanking aperture and basic figure aperture

ABSTRACT

Two or more-staged masks are prepared for a charged beam generating source. One mask has first aperture sections having rectangular apertures arranged into a lattice form, and electrodes which deflects a beam at respective first aperture sections. The other mask has a second aperture section having basic figure apertures for shaping the beam which passes or passed through the first aperture sections. Layout data of a semiconductor apparatus are divided into sizes of the basic figures which take reduction in exposure into consideration so as to be classified according to the basic figures. The beam which is shaped into a form of an overlapped portion of the divided layouts and the classified basic figure is emitted onto a sample.

CROSS REFERENCE TO RELATED APPLICATION

[0001] This application is based upon and claims the benefit of priorityfrom the prior Japanese Patent Applications Nos. P2000-227841 andP2001-222106, filed on Jul. 27, 2000 and Jul. 23, 2001; the entirecontents of which are incorporated herein by reference.

BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] The present invention relates to exposure using an electron orion charged beam. More specifically, the invention relates to exposureof an arbitrary pattern under a condition of constant and periodicalarrangement of wirings, standard cells and the like of a semiconductorapparatus.

[0004] 2. Description of the Related Art

[0005] An electron-beam exposure technique enables processing offine-patterns of not more than submicron-meter which cannot be producedby photolithography. For this reason, the electron-beam exposuretechnique is becoming essential for a semiconductor processing techniquewhich requires refining, high-integration and complication.

[0006] In variable shaped beam (VSB) exposure which is a typicalelectron-beam exposure method, a mask is not required for exposureregardless of pattern forms. In the VSB exposure, since exposure isrepeated by dividing a pattern into a lot of minute rectangular shots,the exposure takes longer time, and there is a disadvantage thatthroughput cannot be obtained.

[0007] In order to heighten the throughput, character projection (CP)exposure technique (partial collective exposure), which is capable ofcollectively shooting a pattern having a certain size, is devised. Inthe CP exposure technique, an electron beam emitted from an electron gunis shaped into a rectangle by a first aperture. A desired character isselected from CP apertures having plural character shapes formed on a CPaperture array. The electron beam shaped into the rectangle is shapedinto the desired character form. Finally, the electron beam having thecharacter form is reduced so as to be emitted onto a desired portion ofa sample. In the CP exposure, portions (character section) of pluraldesired patterns are created on the aperture array, and exposure issuccessively carried out for each character created on the aperturearray. As the character, a pattern which is exposed repeatedly manytimes is selected. However, in this CP exposure, a mask should becreated for each pattern. Namely, in the case where similar patterns aredifferent partially, one aperture cannot be used commonly. For thisreason, the variable shaped beam exposure is also used, and sufficientthroughput cannot be obtained. Further, in this CP exposure, therearises a problem that thermal expansion warpage of a mask, which occurswhen an electron beam is emitted to the mask, is large and patternposition accuracy is lowered.

[0008] In addition, an electron-beam mask transfer system is alsosuggested. This uses a mask including all desired patterns instead of CPaperture array so as to collectively transfer the patterns. Thiselectron-beam mask transfer system has a problem that mask productioncosts an enormous amount of money.

[0009] A blanking aperture array (BAA) system is also suggested. Thisuses an array where not less than hundreds of thousands of apertures,which can deflect an electron beam passing therethrough by means of anelectric signal, are arranged into a lattice form, and creates a desiredbeam shape by means of signal control. However, this BAA system has aproblem that an apparatus for controlling signal of the BAA section isvery expensive.

SUMMARY OF THE INVENTION

[0010] The feature of the present invention is a charged beam exposureapparatus including:

[0011] a charged beam generating source;

[0012] a first flat board which has a plurality of first aperturesections having rectangular apertures arranged close to one another andelectrodes for deflecting the beam passing through the first aperturesections at the respective apertures; and

[0013] a second flat board which is arranged parallel with the firstflat board and has second aperture sections having basic figureapertures for shaping the beam, which passes or passed through the firstaperture sections.

[0014] Other and further objects and features of the present inventionwill become obvious upon an understanding of the illustrativeembodiments about to be described in connection with the accompanyingdrawing or will be indicated in the appended claims, and variousadvantages not referred to herein will occur to one skilled in the artupon employing of the invention in practice.

BRIEF DESCRIPTION OF THE DRAWINGS

[0015]FIGS. 1A and 1B are conceptual diagrams of an electron beamexposure apparatus according to a first embodiment of the presentinvention.

[0016]FIG. 2 is an upper surface diagram of a second aperture array(blanking aperture array) according to the first embodiment.

[0017]FIGS. 3A and 3B are diagrams showing a structure and a function ofthe second aperture array according to the first embodiment. FIG. 3A isa bird's-eye view of the second aperture array, and FIG. 3B is asectional view of the second aperture array.

[0018]FIGS. 4A to 4E are upper surface diagrams of a third aperturearray (basic figure aperture array) according to the first embodiment.

[0019]FIGS. 5A and 5B are diagrams showing a positional relationshipbetween the second aperture array and the third aperture array.

[0020]FIG. 6 is a flow chart showing an exposure data creating methodaccording to the first embodiment.

[0021]FIG. 7 is a flow chart showing an exposure method according to thefirst embodiment.

[0022]FIGS. 8A to 9B are diagrams for explaining the steps in theexposure data creating method according to the first embodiment.

[0023]FIGS. 10A to 10C are diagrams for explaining the steps of theexposure method according to the first embodiment.

[0024]FIG. 11 is a flow chart showing the exposure data creating methodaccording to the second embodiment.

[0025] FIGS. 12 to 16B are diagrams for explaining the steps in theexposure data creating method according to the second embodiment.

[0026]FIG. 17 is a diagram for explaining the step in the exposuremethod according to the second embodiment.

[0027]FIGS. 18A and 18B are upper surface diagrams of the third aperturearray (basic figure aperture array) according to the third embodiment.

[0028]FIG. 19 is an upper surface diagram of the second aperture array(blanking aperture array) according to the third embodiment.

[0029]FIGS. 20A to 20C are diagrams for explaining the steps in theexposure method according to the third embodiment.

[0030]FIGS. 21A and 21B are diagrams for explaining the exposure methodusing a conventional CP aperture array.

[0031]FIG. 22A is an upper surface diagram of the second aperture array(blanking aperture array) according to the fourth embodiment.

[0032]FIG. 22B is an upper surface diagram of the third aperture array(basic figure aperture array) according to the fourth embodiment.

[0033]FIG. 23 is a diagram showing a positional relationship between thesecond aperture array and the third aperture array according to thefourth embodiment.

[0034]FIGS. 24A and 24B are diagrams for explaining the steps in theexposure method according to the fourth embodiment.

[0035]FIG. 25A is an upper surface diagram of the second aperture array(blanking aperture array) according to a modified example of the fourthembodiment.

[0036]FIG. 25B is an upper surface diagram of the third aperture array(basic figure aperture array) according to the modified example of thefourth embodiment.

[0037]FIG. 26 is a diagram showing a positional relationship between thesecond aperture array and the third aperture array according to themodified example of the fourth embodiment.

[0038]FIG. 27 is a diagram for explaining the exposure method accordingthe modified example of the fourth embodiment.

DETAILED DESCRIPTION OF THE EMBODIMENTS

[0039] Various embodiments of the present invention will be describedwith reference to the accompanying drawings. It is to be noted that thesame or similar reference numerals are applied to the same or similarparts and elements throughout the drawings, and the description of thesame or similar parts and elements will be omitted or simplified.

[0040] (First Embodiment)

[0041]FIG. 1 is a conceptual diagram of a charged beam exposureapparatus according to the first embodiment. The charged beam exposureapparatus according to the first embodiment has an electron gun 1, ablanking aperture array 3, and a basic figure aperture array 5.

[0042] The electron gun 1 is a charged beam generating source. “Chargedbeam” is an electron beam 9 and an ion beam. The following embodimentwill explain the electron beam 9. The following explanation can beapplied also to the ion beam in a manner that words are replaced.

[0043]FIG. 1A is a conceptual diagram and does not show a lens systemfor simplification. A more concrete structure of optical system of thecharged beam exposure apparatus shown in FIG. 1A is shown in FIG. 1B.

[0044]FIG. 1B shows more detailed structure of the optical system of thecharged beam exposure apparatus shown in FIG. 1A.

[0045] The electron gun 1 contains a blanker 76. A voltage is applied tothe blanker 76 by the electron gun control means 81 so that the electronbeam is brought into on or off state.

[0046] The electron beam 9 is controlled so as to have desired currentdensity by the first lens 71 (condenser lens) so as to be emitted ontothe first aperture 2.

[0047] The electron beam 9 which passed through the first aperture 2 isemitted onto the second aperture 3 (blanking aperture array) by a firstprojection lens 74. Further, the electron beam 9 which passed throughthe second aperture 3 is emitted onto the third aperture 5 (basic figureaperture array) by a second projection lens 75.

[0048] The first deflector (means) 4 is composed of four stages. Thefirst deflector deflects the electron beam 9. The second deflectorreturns the electron beam 9 to an angle vertical to the third aperture.The third deflector returns the electron beam 9 which passed through thethird aperture onto an optical axis, and the fourth deflector returnsthe electron beam 9 to a direction parallel with the optical axis.

[0049] The electron beam 9 which is return to the optical axis isreduced and projected and exposed on the sample 7 by a second lens 72(reduction lens and objective lens 9. The exposing position of thesample 7 is controlled by the second deflector (deflecting means:objective deflector) 6.

[0050] As shown in FIG. 2, the blanking aperture array 3 of the firstembodiment is a flat board which has a plurality of first aperturesections 8 having rectangular apertures and arranged in a lattice formso as to be close to each other. The first aperture sections arearranged cyclically. The “aperture section” 8 is an iris of the electronbeam 9. Moreover, as shown in FIGS. 3A and 3B, the blanking aperturearray 3 has electrodes 10 which deflect the electron beam 9 passingthrough the first aperture sections 8 at the first aperture sections 8respectively. The blanking aperture array 3 deflects the electron beam 9at each aperture section so as to or not to emit the electron beam 9onto a basic figure, namely, brings the beams into an on/off state.

[0051] As shown in FIG. 1, the basic figure aperture array 5 of thefirst embodiment is a second flat board which is arranged parallel withthe blanking aperture array 3. The basic figure aperture array 5 hassecond aperture sections A1 to A5 and B1 to B5 and C having basic figureapertures as shown in FIG. 4A. The second aperture section A1 or thelike shapes the electron beam 9 which is about to pass or passed throughthe first aperture sections 8. The aperture section D is used to shape avariable shaped beam. “About to pass or passed” means that the electronbeam first passes through the first aperture sections 8 and next throughthe second aperture section A1 or the like or the passing order may bereversed. More specifically, the blanking aperture array 3 and the basicfigure aperture array 5 form two-stage apertures for the electron gun 1,but the blanking aperture array 3 or the basic figure aperture array 5may be arranged on the side of the electron gun 1. “The basic figure” isbasically a desired pattern. As pattern of wirings in a semiconductorapparatus, “the basic figure” may be set as follows. In thesemiconductor apparatus, a width and intervals of wirings are uniform,and the wirings are bent at right angles. However, lengths of thewirings are different from one another. Here, the widths and theintervals of the wirings (or their ratio) are the same as a desiredsemiconductor apparatus, and the lengths of the wirings are set to acertain length. The pattern of such wirings is determined as “basicfigure”.

[0052] As a result, in the case where the wiring pattern is short, oneportion of the “basic figure” is used, and in the case where the patternis long, the “basic figure” is used repeatedly and partially so that thewiring pattern can be represented by the “basic figure”. The “basicfigure” is a figure which has a basic rule of the wiring pattern such asthe width and interval of the wirings. The basic figure aperture array 5having the basic figures draws a figure according to the basic rule, andlattice-shaped blanking aperture array 3 can cut unnecessary portion ofthe drawn figure. Namely, the length of the wiring in the wiring patterncan be shortened to a desired length. As a result, for example, since apattern for each length of the wirings should not be prepared, a numberof masks or the like can be reduced. The mask production cost can bereduced, and throughput in exposure can be improved.

[0053] As shown in FIG. 1, the charged beam exposure apparatus has afirst deflector 4 for emitting the electron beam 9 which passed throughthe first aperture sections 8 onto the second aperture section A1 or thelike. A basic figure selection deflector which is called as the firstdeflector 4 emits the beam 9 which passed through the second aperturearray 3 onto an arbitrary position on the basic figure aperture array tobe the third aperture array 5.

[0054] The charged beam exposure apparatus has a second deflector 6 foremitting the electron beam 9 which passed through the second aperturesection A1 or the like onto an arbitrary position on a sample 7. Thecharged beam exposure apparatus has a second lens 72 for imaging theelectron beam 9 which passed through the second aperture section A1 orthe like on a surface of the sample 7. An objective deflector which iscalled as the second deflector 6 transfers the electron beam 9 whichpassed through the basic figure aperture array 5 onto an arbitraryposition of the sample 7. The second lens 72 as an imaging lens systemimages the electron beam 9 which passed through the basic figureaperture array 5 on the sample.

[0055] The “sample” 7 is a semiconductor substrate such as silicon (Si)to be used for producing a semiconductor apparatus, and a glasssubstrate to be used for a mask for exposure. As a result, the pluralbasic figures A1 to A5 and B1 to B5 and C can be used according to thepattern of a semiconductor apparatus. For example, as for the wiringpattern, the wiring pattern, where wirings in a vertical direction andwirings in a horizontal direction are combined, can be formed. Moreover,since the second lens 72 is provided, a refined pattern can be easilyformed.

[0056] The blanking aperture array 3 has the aperture sections 8 and theelectrodes 10 according to LSI wiring pitch. Moreover, the basic figureaperture array 5 has basic figures according to the LSI wiring pitch.Here, the “LSI wiring pitch” is a repeating interval of the wirings of alarge-scale integrated circuit (LSI) of the semiconductor apparatus. Theaperture sections and the electrodes are allowed to correspond to thepitches so that the lengths of the wirings can be adjustedindependently. Moreover, the basic figures are allowed to correspond tothe pitches so that the basic figures can be used for the exposure ofthe wiring pattern.

[0057] A ratio of the width of the first aperture sections 8 to theinterval of the first aperture sections 8 is larger than a ratio of thewidth of the second aperture section A1 to the interval of the secondaperture section A1. For this reason, shape of the basic figure A1 orthe like can be prevented from being chipped due to shadow of the firstaperture sections 8.

[0058] The shapes of the apertures of the second aperture section A1 orthe like are a wiring pattern on straight lines in the vertical andhorizontal directions and a connection pattern having a right-angledportion connecting the vertical and horizontal wirings. The wiringpattern and the connection pattern are a plurality of patterns withdifferent rotational directions and right, left, up and down invertedpatterns. As the basic figure, wiring patterns on the straight lines ofthe vertical and horizontal directions are prepared. Further, connectionpatterns which have a right-angled portion connecting the wirings in thevertical and horizontal directions or connection patterns that the rightangled portions can be composed by combinations are prepared. Theconnection patterns have a relation with right, left, up and downinverted patterns so as to be capable of coping with connection in everycase of the wirings in the vertical and horizontal directions.

[0059] The second aperture section A1 or the like includes first slitswhich are arranged parallel with the vertical sides of the rectangles soas to be opposed to one another with uniform intervals, and second slitswhich are parallel with the horizontal sides of the rectangles so as tobe opposed to one another with uniform intervals. Here, the “slit” is anelongate aperture section, and it corresponds to the wiring pattern. Asa result, the wiring pattern having arbitrary lengths in the verticaland horizontal directions can be obtained.

[0060] As for the first slits, their lengths are equal with one another,and their both ends are arranged on the straight line, and a number ofthem is the same as a number of lines of lattice of the blankingaperture array 3. Moreover, as for the second slits, their lengths areequal with one another, their both ends are arranged on the straightline, and a number of them is the same as a number of rows of thelattice of the blanking aperture array 3. As a result, a plurality ofwiring patterns can be formed by one beam emission.

[0061] Further, as shown in FIG. 1A, the electron beam exposureapparatus of the first embodiment has the first lens 71 for controllingcurrent density of the electron beam 9 emitted from the electron gun 1.

[0062] The electron beam exposure apparatus of the first embodiment hasa first aperture 2 for forming the shape of the electron beam 9 into arectangle in order to prevent an excessive electron beam 9 from beingemitted onto the second aperture array 3 or the like.

[0063] In addition, the electron beam exposure apparatus has a samplestand 73 having driving means and sample stand driving control means 87.As a result, the sample 7 can be moved to a desired position.

[0064] The electron beam exposure apparatus has electron gun controlmeans 81, a central control device 82, second aperture array controlmeans 83, first deflector control means 84, second deflector controlmeans 86 and exposure data recording means 88. The central controldevice 82 controls the electron gun control means 81, the secondaperture array control means 83, the first deflector control means 84,the second deflector control means 86, the sample stand driving controlmeans 87 and the exposure data recording means 88 via a bus 85 so as tobe capable of executing the exposure method.

[0065] Data 94 for third aperture array, data 95 for sample and data 93for second aperture array control for each shot of the electron beams 9are recorded in the exposure data recording means 88. Data 94 for thirdaperture array include basic figure names as identifying tags which canidentify the basic figures, and emitted positions of the electron beam 9in the basic figures. The data 95 for sample include emitted positionsof the sample 7 of the electron beam 9. The data 93 for second aperturearray control include on/off information 93 showingexistence/non-existence of deflection for each aperture section 8.

[0066] The electron gun control means 81 controls the on/off state ofthe electron beam 9 emitted from the electron gun 1 at timing specifiedby the central control device 82. The second aperture array controlmeans 83 sets all the aperture sections 8 to on or off state based onthe data 93 for second aperture array control at timing specified by thecentral control device 82. The first deflector control means 84 appliesa control voltage at timing specified by the central control device 82so that the electron beam 9 can be emitted to a direction based on thedata 94 for the third aperture array. The second deflector control means86 applies a control voltage at timing specified by the central controldevice 82 so that the electron beam 9 can be emitted to a directionbased on the data 95 for sample. The sample stand driving control means87 moves the sample stand 73 at timing specified by the central controldevice 82 so that the electron beam 9 can be emitted to a directionbased on the data 95 for sample.

[0067] The electron beam 9 shot from the electron gun 1 passes throughthe first aperture 2, and is shaped into a desired shape on the secondaperture array 3. The electron beam 9 is imaged on the third aperturearray 5, and passes through the second deflector 6 and the imaging lenssystem 72 so as to be exposed in a desired position of the sample 7. Inembodiments 1 and 2 explained below, an acceleration voltage of theelectron beam 9 is 5 kV.

[0068]FIG. 2 is an upper surface diagram of the blanking aperture array3 according to the first embodiment. The aperture sections 8 areprovided on the blanking aperture array 3. The aperture sections 8 arearranged according to the wiring pitch of the semiconductor apparatus(LSI). The aperture sections 8 are square, and they are arranged intosquare lattice form composed of 10 lines (L1 to L10) and ten rows (R1 toR10). Namely, their total number is 100 at the utmost. For example, whenthe wiring width and the wiring interval are 0.1 μm and the wiring pitchis 0.2 μm and a reduction rate from the array 3 to the sample 7 is ⅕,pitches of the aperture sections 8 in the line direction and the rowdirection on the array may be set to 1 μm. As a result, all theone-hundred aperture sections 8 can be arranged within an area which is10 by 10 μm square.

[0069] The two aperture arrays 3 and 5 have different functions. Aposition where the wirings are arranged is determined on the aperturearray 3, and a shape in this position is determined on the aperturearray 5. For this reason, a structure such that the shape cannot becontrolled on the aperture array 5 is not permitted on the aperturearray 3. More specifically, a ratio of the width of the aperture section8 to a distance between the aperture sections 8 is set to be larger thanthe ratio of the width of the wiring to the intervals between thewirings. In the above example, since the ratio of the width of thewiring to the interval between the wirings is 1, the ratio of the widthof the aperture section to the intervals between the aperture sectionsmay be more than 1, but 4 or more is preferable. It is considered thatthe maximum value of the actual ratio is obtained when the arrangementis such that the interval between the aperture sections has a minimummachining dimension. Since the width of the wirings is generally set tothe minimum machining dimension, the ratio becomes about 10 (1 μm/0.1μm). Namely, the ratio becomes 10 which is obtained by multiplying aninverse number 5 of the reduction rate by the ratio 2 of the wiringpitch.

[0070]FIG. 3A is an outside view of the second aperture array 3according to the first embodiment. The second aperture array 3 has anaperture substrate 12, the aperture sections 8 which are opened in theaperture substrate 12, the electrodes 10 which are arranged on bothsides so as to be opposed to one another across the aperture sections 8,and an I/O interconnection and terminal 77 connected with the electrodes10. The I/O interconnection and terminal 77 is connected with the secondaperture array control means 83 for outputting a control signal to beon/off information of the aperture sections 8. Moreover, a mask holder15 for fixing the array 3 to the exposure apparatus may be arranged on aside surface of the array 3.

[0071]FIG. 3B is a schematic sectional view of the second aperture array3 according to the first embodiment. The aperture substrate 12 iscomposed of a silicon (Si) substrate 13, and an insulating film 14 whichis arranged on a rear surface of the substrate 13. An electron beamdeflection voltage which is a control signal from the second aperturearray control means 83 is applied to the electrodes 10 via the I/Ointerconnection and terminal 77 provided on the mask holder 15. In thecase where the deflection voltage is not applied to the electrodes 10,the electron beam 9 emitted onto the second aperture array 3 goesstraight to the aperture sections 8 so as to be emitted onto the thirdaperture array 5. Meanwhile, in the case where the deflection voltage isapplied to the electrodes 10, an electric field is generated between theelectrodes 10 and 11, and the electron beam 9 is deflected so as not tobe emitted onto the third aperture array 5. In such a manner, theexistence/non-existence of the deflection due to the aperture sections 8is controlled by the on/off information of the aperture sections 8 whichis the control signal from the control means 83. The pattern form whichis formed by a plurality of the aperture sections 8 on the on state isemitted onto the third aperture array 5. Here, the deflection voltage Vfor non-emission is about 30 V.

[0072]FIGS. 4A to 4E are upper surface diagrams of the basic figureaperture array 5 according to the first embodiment. The basic figureaperture array 5 has aperture sections of the basic figures A1 to A5, B1to B5 and C and a rectangular aperture section D. The basic figures A1to A5 and B1 to B5 are composed of 10 apertures which have widths andare arranged with intervals according to the wiring pitch of thesemiconductor apparatus. Their size is fit within the area which is 10by 10 μm square. The size is the same as the size such that theone-hundred aperture sections 8 are fit on the array 3. The same sizesare adopted in order to simplify the principle of the exposure,mentioned below. As a result, the positional relationship between thearrays 3 and 5 can be easily understood by overlapping the arrays 3 and5. Therefore, the electron beam 9 is increased or reduced by a constantrate between the second aperture array 3 and the third aperture array 5so that the basic figure which is increased or reduced by the same ratemay be used for the size of the one-hundred aperture sections 8 of thearray 3.

[0073] There will be explained below a form of the basic figure A5. Thebasic figure A5 is composed of ten congruent rectangles. A length of thelateral side of the rectangle is 0.5 μm, and a length of thelongitudinal side is 10 μm. The rectangles are arranged so that extendedlines of the two lateral sides of the ten rectangles coincide with eachother. Moreover, the rectangles are arranged with equal intervals, andthe intervals are 0.5 μm. This is because the width and the interval ofthe wirings are, for example, set to 0.1 μm. A ratio of the length ofthe lateral side to the interval between the rectangles may be the sameas the ratio of the width of the wirings to the interval between thewirings.

[0074] The basic figure A1 is congruent with the figure below the figureA5 which is divided into two by a straight line connecting anupper-right angle of the right-end rectangle and a lower-left angle ofthe left-end rectangle. The basic figure A1 is arranged so as to becapable of being overlapped with the figure below the figure A5 byparallel movement. Here, in the case of “be capable of beingoverlapped”, the arranging direction is limited and also the figures arecongruent with each other. For this reason, except for a particularlynecessary case, “congruent” is not described according to thedescription of “be capable of being overlapped”.

[0075] The basic figure A2 can be overlapped with a figure which isobtained as axisymmetry of the figure A1 by only parallel movement ofthe obtained figure with respect to a parallel line with thelongitudinal side of the rectangle of the figure A5.

[0076] The basic figure A3 can be overlapped with a figure which isobtained as axisymmetry of the figure A1 by only parallel movement ofthe obtained figure with respect to a parallel line with the lateralside of the rectangle of the figure A5.

[0077] The basic figure A4 can be overlapped with a figure which isobtained as axisymmetry of the figure A3 by only parallel movement ofthe obtained figure with respect to a parallel line with thelongitudinal side of the rectangle of the figure A5.

[0078] The basic figure B1 can be overlapped with the figure A1 byrotating the figure A1 through 90° in the counterclockwise direction andmoving it parallel.

[0079] The basic figure B2 can be overlapped with the figure A2 byrotating the figure A2 through 90° in the counterclockwise direction andmoving it parallel.

[0080] The basic figure B3 can be overlapped with the figure A4 byrotating the figure A4 through 90° in the counterclockwise direction andmoving it parallel.

[0081] The basic figure B4 can be overlapped with the figure A3 byrotating the figure A3 through 90° in the counterclockwise direction andmoving it parallel.

[0082] The basic figure B5 can be overlapped with the figure A5 byrotating the figure A5 through 90° in the counterclockwise direction andmoving it parallel.

[0083] The basic figure C is obtained as an area where the figures A5and B5 are overlapped with each other when the figure B5 is movedparallel so that the longer left side of the left-end rectangle of thefigure A5 coincides with the shorter left side of the ten rectangles ofthe figure B5. The figure C forms a plug to be an inter-layer wiringwhen the multi-layer wiring is formed, but the figure C is provided inorder to form a via hole when the plug is formed. In the aboveembodiment, the vertical and horizontal straight line patterns A and Band the plug C are shown as the basic figures, but another patterns maybe used as the basic figures.

[0084]FIG. 4B is a basic figure (A2+B) which is formed by synthesizingthe basic figures A2 and B1. Similarly, a basic figure (A1+B4) of FIG.4C is formed by synthesizing the basic figures A1 and B4. A basic figure(A4+B2) of FIG. 4D is formed by synthesizing the basic figures A4 andB2. A basic figure (A3+B3) of FIG. 4E is formed by synthesizing thebasic figures A3 and B3.

[0085] In addition, a rectangular aperture section D of FIG. 4A is anaperture for VSB. A pattern which cannot be exposed by using the basicfigures is conventionally provided for VSB exposure. In the case wherethe VSB exposure is carried out, it is necessary to image the secondaperture array image on the third aperture array image. This point issimilar to the conventional charged beam exposure apparatus, but in thecase where only CP exposure is carried out, it is not always necessaryto image the second aperture array image on the third aperture arrayimage. On the contrary, it is necessary not to image edges of theaperture sections 8 of the second aperture array 3 on the third aperturearray image. Namely, the image of the aperture sections 8 on the thirdaperture array 5 is slightly unfocused so that the images are slightlyoverlapped with each other. These optical conditions can be setarbitrarily by using the first projection lens 74, the second projectionlens 75 and the like shown in FIG. 1B according to a pattern to beexposed.

[0086]FIG. 5A is a diagram showing a positional relationship between theaperture sections 8 of the second aperture array 3 and the basic figureA5 of the third aperture array 5. The figure A5 is arranged so as to beoverlapped with all the lines (L1 to L10) of the aperture sections 8.Moreover, the figure A5 is arranged so as to be overlapped with all therows (R1 to R10). Two or more apertures of the basic figure are notoverlapped with one aperture section 8. The sides of the square aperturesections 8 are parallel with the sides of the rectangles of the figureA5. The rectangle of the figure A5 is not arranged on three or moresides of the square of one aperture section 8.

[0087]FIG. 5B is a diagram showing a positional relationship between theaperture sections 8 of the second aperture array 3 and the basic figureB3 of the third aperture array 5. The figure B3 is arranged so as to beoverlapped with all the lines (L1 to L10) of the aperture sections 8.Namely, there is no line where the figure B3 does not exist. Moreover,the figure B3 is arranged so as to be overlapped with all the rows (R1to R10). Namely, there is no row where the figure B3 does not exist. Twoor more apertures of the basic figure are not overlapped with oneaperture section 8. The sides of the square aperture sections 8 areparallel with the sides of the rectangles of the figure B3. The figureB3 is not arranged on three or more sides of the one square aperturesection 8.

[0088] At the time of drawing in exposure, selection is made from theapertures A1 to A5, B1 to B5 and C as the basic figures of the thirdaperture array 5, and the control voltage V is applied to each aperturesection 8 so that the electron-beam 9 which passes through the secondaperture array 3 is deflected according to the pattern form which isdesired to be drawn. The electron beam 9 passes through the secondaperture array 3 and the third aperture array 5 so as to be emitted intothe form of the pattern to be drawn on the sample 7.

[0089] In such a manner, the basic figure apertures A1 to A5, B1 to B5,C, (A2+B1) and the like to be references are created so that one basicfigure aperture A1 to A5, B1 to B5, C, (A2+B1) or the like can beapplied to a plurality of patterns according to the beam 9 form of thesecond aperture array 3. As a result, in comparison with a number of CPapertures in the conventional CP system, a number of the apertures canbe reduced. Due to this reduction, the mask cost can be reduced furtherthan a mask in the electron-beam mask transfer system.

[0090] In addition, since only the electron beam 9 required for theformation of the pattern on the first aperture 2 is emitted onto thesecond aperture array 3, an amount of the electron beam 9 to be emittedonto the aperture array 3 can be small. As a result, chromaticaberration can be prevented, and also contamination which easily occurson the second aperture array can be avoided. The electron beam 9 passesthrough the aperture sections 8 also on the aperture array 3, and thusan amount of the electron beam 9 to be emitted onto the third aperturearray 5 itself can be small. As a result, the preventive measuressimilar to the above are taken. An amount of the electron beam 9 to beemitted is suppressed so that a rise in temperature of the aperturearrays 3 and 5 is suppressed, and thermal expansion can be suppressed.For this reason, the patterns can be formed accurately. One hundred ofthe aperture sections 8 is a number which can be achieved sufficientlyin the production technical field and in the technical field of voltagecontrol for the electrodes 10. Here, the above second aperture array iscomposed of square lattices arranged on 10 lines×10 rows. However, forexample, a number of the lies and a number of the rows may be setarbitrary such as 20 lines×15 rows. The arrangement of the aperturesections of the second aperture array may be set arbitrarily accordingto the basic figures.

[0091] There will be explained below an exposure method by theabove-described exposure apparatus. At first, layout data of thesemiconductor apparatus are converted into exposure data which areapplicable to the exposure apparatus. FIG. 6 is a flow chart showing anexposure data creating method according to the first embodiment.

[0092] In the exposure data creating method according to the firstembodiment, at step S1 layout data of the semiconductor apparatus aredivided into a size of the basic figure aperture A1 or the like whichtakes reduction in exposure into consideration.

[0093] At step S2 the divided layouts are classified as the basic figureaperture A1 or the like.

[0094] At step S3 a portion where the divided layouts and the classifiedbasic figure aperture A1 or the like are overlapped with each other isobtained by logic operation.

[0095] Further, the data 93 for second aperture array control, which areon/off information about deflection due to the electrodes 10 of thesecond aperture array 3, are created based on the overlapped portion.

[0096] Finally, drawing data 92 are created. The drawing data 92 havethe data 95 for sample including a drawing position of the sample 7 as aposition of the divided layouts in the layout of the semiconductorapparatus. Moreover, the drawing data 92 have the data 94 for the thirdaperture array which include a name of the classified basic figureaperture and if necessary an emitting position of the beam onto thebasic figure aperture. The drawing data 92 have an address 96 for beingcapable of reading the data 93 for the second aperture array control.For this reason, the data 93 have correspondence to the data 92.Moreover, the data 94 and 95 and the address 96 have correspondence toeach shot of the electron beam 9 for exposed. The drawing data 92 andthe data 93 for the second aperture array control compose exposure data91 for one shot. The exposure data 91 as well as a plurality of exposuredata 97 and 98 having the same structure as the data 91 compose theexposure data (whole) of the semiconductor apparatus.

[0097] Here, “the basic figure aperture” is an iris which is cut intothe shape of the basic figure. The “position of the divided layouts inthe layout of the semiconductor apparatus” is information which canreproduce the whole layout of the semiconductor apparatus by rearrangingis obtained by rearranging the divided layouts. “Taking reduction inexposure into consideration” means that portions which are deformed dueto the reduction are corrected so as to have correspondence to oneanother. “The name of the basic figure” is a tag which can identify thebasic figure from a plurality of the basic figures. As a result, sincedata showing forms of the basic figures may not be provided, an amountof data can be reduced, and a generating speed of the exposure data anda processing speed of exposure can be improved. In “the address 96 forbeing capable of reading the data 93 for the second aperture arraycontrol”, the data 93 for the second aperture array control havecorrespondence to the position via the address 96.

[0098] The exposure data creating method according to the firstembodiment comprising the steps of

[0099] dividing chip data into a CP size;

[0100] classifying the divided CP patterns as the basic figure A1 or thelike in library;

[0101] performing logic operation of the basic figure A1 or the like andthe CP patterns and obtaining an overlapped portion;

[0102] creating data B for beam on/off on the second aperture array 3;and

[0103] creating drawing data A including position data of the CPpatterns on the third aperture array 5, which are paired with the basicfigure A1 or the like.

[0104] Here, the “CP size” is a range in which exposure can be carriedout by one shot of the beam emission. The “CP pattern” is a patternwhich is divided based on the range. “In library” means to preparethings for use object.

[0105] The “logic operation of the basic figure and the CP patterns” iscalculation which is carried out for each position of the area includingthe basic figure and the CP patterns in a state that the basic figure isoverlapped with the CP patterns. In the logic operation, when both thebasic figure and the CP patterns exist, 1 is put, and when not exist, 0is put. As a result, since the forms of the basic figures should not beprovided as data, an amount of data can be reduced, and the creatingspeed of the exposure data and the processing speed of the exposure canbe improved.

[0106] The exposure data 91 of the first embodiment has the data 93 forthe second aperture array control showing on/off of the deflection ofthe aperture sections 8 on the second aperture array 3.

[0107] The exposure data 91 has the drawing data 92. The drawing data 92includes:

[0108] the data 95 for sample of a drawing positions of the dividedlayouts in the layout of the semiconductor apparatus;

[0109] the data 94 for the third aperture array of the name of theclassified basic figure; and

[0110] the address 96 for being capable of reading the first data.

[0111] The data 95 and the data 94 and the address 96 havecorrespondence to one another.

[0112] Such exposure data are recorded on a recording medium which iscapable of being read by a computer. Here, the “recording medium”includes media, which is capable of recording programs thereinto, suchas a semiconductor memory, a magnetic disc, an optical disc and amagnetic tape. In order to prevent the data size from being enlarged,data showing the form of the basic figure A1 or the like can be omitted.Therefore, as for the pattern data whose file size is reduced by thismethod, design data can be downloaded or uploaded for short time byusing a network such as internet. As a result, an order from the outsidea company and a process on the outside a company which have beendifficult can be carried out comparatively easily.

[0113] A program for creating the exposure data according to the firstembodiment has:

[0114] the procedure for dividing the layout data of the semiconductorapparatus into a size of the basic figure aperture A1 or the like whichtakes reduction in the exposure into consideration; and

[0115] the procedure for classifying the divided layouts as the basicfigure aperture A1 or the like.

[0116] Further, the program for creating the exposure data has:

[0117] the procedure for obtaining an overlapped portion of the dividedlayouts and the classified basic figure aperture A1 or the like; and

[0118] the procedure for creating the data 93 for the second aperturearray control showing existence/non-existence of the deflection of theaperture sections 8 on the second aperture array 3.

[0119] Further, the program for creating the exposure data has theprocedure for creating the drawing data 92 having:

[0120] the data 95 for sample showing a drawing position of the dividedlayouts in the layout of the semiconductor apparatus;

[0121] the data 94 for the third aperture array of the name of theclassified basic figure; and

[0122] the address 96 for being capable of reading first data,

[0123] wherein the position 95, the name 94 and the address 96 havecorrespondence to one another.

[0124] The program for creating the exposure data is stored in arecording medium which can be read by a computer. As a result, theexposure data can be created easily and automatically by the computer.

[0125] The exposure data creating method according to the firstembodiment will be explained more specifically.

[0126] (1) At step S1 of FIG. 6, the data of the layout in thesemiconductor apparatus (chip data) are divided into sizes of the basicfigure apertures A1 to A5, B1 to B5 and C taking reduction exposure intoconsideration. The divided layout for 1 block is shown in FIG. 8A. Thislayout is composed of layout patterns 16, 17 and 18 of the wiringsarranged in the horizontal direction. A length of the pattern 17 isshorter.

[0127] (2) At step S2 of FIG. 6 the divided layouts are classifiedaccording to the basic figures. The layout of FIG. 8A is for the wiringswhich are arranged in the horizontal direction and the outline of thelayout is rectangular. For this reason, the basic figure B5 shown inFIG. 8B is selected from the basic figures of FIG. 4A.

[0128] (3) At step S3 the logic operation is performed by the selectedbasic figure B5 corresponding to the divided layout (FIG. 8A) so thatthe overlapped portion is obtained. The data 93 for the second aperturearray control (data B for beam on/off) of the aperture sections 8 on thesecond aperture array 3 are created. The created data 93 are recorded onthe optical data recording means 88 in FIG. 1.

[0129] A coordinate system which is composed of coordinate units 19 inthe arrangement position having the same lines and rows as the aperturesections 8 on the second aperture array 3, is prepared. As shown in FIG.8C, when the basic FIG. 5B is overlapped on the coordinate system, theFIG. 5B is arranged on all the coordinate units 19. Similarly as shownin FIG. 9A, the layouts 16 to 18 are overlapped on the coordinatesystem. No layout is arranged in the range of the lines 6 to 10 and therows 6 to 8. As a result, the overlapped portion becomes display data 20which shows “no deflection” shown by “□” in FIG. 9B. The non-overlappedportion becomes display data 21 which shows “deflection” shown by “×”.The display data 20 and 21 for each coordinate (L, R) are the data B forbeam on/off (93).

[0130] (4) Meanwhile, the drawing data A (92) are created. The drawingdata A (92) are composed of a drawing position on the sample 7(arrangement position of the divided layouts (FIG. 8A) in the wholelayout of the semiconductor apparatus, namely, corresponding to the data95), the basic figure name (corresponding to the data 94) according tothe drawing position, and the address 96 for being capable of readingthe data B (93) according to the drawing position. Here, the basicfigure name according to the drawing position (corresponding to the data94) is not limited to this, namely, and basic figure B5 or the like maybe identified. Namely, the arrangement position on the third aperturearray 5 and allocated identification number may be used. Moreover, thecreated data 92 are recorded on the exposure data recording means 88 ofFIG. 1.

[0131] The sequence returns to step S1 of FIG. 6 in (1) so that theexposure data 97 and 98 are created similarly until the divided layoutsfor 1 block do not exist.

[0132] There will be explained below the latter half of the exposuremethod using the semiconductor apparatus using the created exposure data91. FIG. 7 is a flow chart showing the exposure method according to thefirst embodiment.

[0133] (5) At step S11 the central control device 82 calls the drawingpositions 95 of the drawing data A (92) for the exposure data 91, 97 and98 from the exposure data recording means 88. First, the case of theexposure data 91 will be explained below.

[0134] (6) Next, at step S12 the central control device 82 calls thename of the basic figure B5 as the basic figure name 94 corresponding tothe called drawing position 95 from the exposure data recording means88. The name of the basic figure B5 is input into the first deflectorcontrol means 84.

[0135] In addition, the central control device 82 calls the address 96for being capable of reading the data B (93) corresponding to the calleddrawing position 95. The central control device 82 calls the data B (93)based on the addresses 96 and inputs the data B to the second aperturecontrol means 83. The called data B (93) are the data explained withreference to FIG. 9B. As for the data 93, the display data 20 showingnon-deflection are simplified and are shown in FIG. 10A as distribution22 of the aperture sections 8 of non-deflection.

[0136] (7) At step S13 the second aperture array control means 83applies control voltage V for a deflection to the electrodes 10 of thesecond aperture array 3 based on the input data B (93).

[0137] (8) At step S14 the first deflector control means 84 applies acontrol voltage to the first deflector 4 based on the input basic figurename. The control voltage is applied to the deflector 4 so that theelectron beam 9 is led to the basic figure B5 in the array 5 of FIG. 4based on the name of the basic figure B5 of the input data A. As aresult, as shown in FIG. 10B, a mask due to the distribution 22 of theaperture sections 8 which do not deflect the electron beam 9 to itsadvancing path, and a mask due to the basic figure B5 are arranged. Theelectron beam 9 passing through both the masks has a form 23 shown inFIG. 10C. The form 23 coincides with the forms 16, 17 and 18 of FIG. 8A.

[0138] (9) At step S15 the second deflector control means 86 inputs thedrawing position 95 called into the central control device 82. Thesecond deflector control means 86 applies a control voltage to thesecond deflector 6 to be a deflector for position specifying based onthe called drawing position 95.

[0139] (10) At step S16 the central control device 82 instructs theelectron gun control means 81 to emit the electron beam 9 from theelectron gun 1 to the first aperture 2. Here, the control voltagesshould be applied at steps S13 to S15 also when the electron beam 9 isemitted. An amount of the emitted electron beam 9 is sufficient for theexposure of the data A shaped into the form 23 shown in FIG. 10C to thedrawing position 95.

[0140] The emission of the beam 9 is stopped, and the application of thecontrol voltages to the second aperture array 3 and the first and seconddeflectors 4 and 6 is stopped. More specifically, the beam 9 is emittedor is not emitted by a beam blanker 76, shown in FIG. 1B.

[0141] (11) At step S17 a judgment is made as to whether or not theelectron beam 9 is emitted to all drawing positions of the data A. Sincethe electron beam 9 is not emitted to the drawing positions 94 of theexposure data 97 and 98 in FIG. 6, the sequence returns to step S12 sothat the steps S12 to S16 are executed for the drawing positions. Afterthe execution, when the drawing position to which the beam is notemitted does not exist, the exposure method is ended. In the case wherethe chip is larger than the beam deflection area of the exposureapparatus, the sample stand 73 having the driving means on which thesample 7 is placed moves. This movement is carried out at the time ofexecuting the step S15 or instead of the execution of the step S15.Namely, the sample stand driving control means 87 inputs the calleddrawing position 95 to the central control device 82. The sample standdriving control means 87 moves the sample stand 73 based on the calleddrawing position 95.

[0142] Namely, in the case of the patterns 16 to 18 shown in FIG. 8A,these patterns 16 to 18 are created as CP apertures in the conventionalmethod. In the first embodiment, the basic figure aperture B5 having aline and space pattern shown in FIG. 8B is prepared. The beam shapeshown in FIG. 10A is formed on the second aperture array 3, and the beamis emitted onto the apertures B5 shown in FIG. 8B. As a result, thepattern having the same form as FIG. 8A can be obtained as the exposurepattern 23 of FIG. 10C.

[0143] Various patterns can be drawn by changing the form of the beamwhich is not deflected on the second aperture array 3 based on the basicfigures on the third aperture array 5. Moreover, the exposure (drawing)data are divided into the data A (92) and B (93) so that the data can becompressed.

[0144] (Second Embodiment)

[0145] Next, there will be explained below the creating method accordingto the second embodiment which is obtained by developing the exposuredata creating method explained in the first embodiment. Moreover, therewill be explained below the exposure method according to the secondembodiment using the developed creating method. FIG. 11 is a flow chartshowing the exposure data creating method according to the secondembodiment.

[0146] In the exposure data creating method according to the secondembodiment, at step S4 data of the layout in the semiconductor apparatusare divided into a vertical line pattern and a horizontal line patternwhich take reduction in the exposure into consideration.

[0147] Next, at step S5 widths of the vertical line patterns areenlarged so that a first pattern, in which the adjacent vertical linepatterns are integrated, is created. Further, widths of the horizontalline patterns are enlarged so that a second pattern, in which theadjacent horizontal line patterns are integrated, is created.

[0148] At step S6 the first and second patterns are divided into thesizes of the basic figure apertures which take reduction in the exposureinto consideration.

[0149] At step S2 similarly to the case of FIG. 6, the divided first andsecond patterns are classified according to the basic figure apertures.

[0150] At step S3 similarly to the case of FIG. 6, the overlappedportions of the divided first and second patterns and the classifiedbasic figure apertures are obtained. The data 93 for the second aperturearray control showing existence/non-existence of deflection at eachaperture section on the aperture array are created. Moreover similarlyto the first embodiment, the drawing data 92 are created. A wiringpattern which is obtained by combining the wirings in the verticaldirection and the wirings in the horizontal direction can be formed bythe exposure data creating method according to the second embodiment.

[0151] There will be explained below in detail the exposure datacreating method according to the second embodiment.

[0152] (1) At step S4 the pattern in the chip data is divided intovertical component patterns and horizontal component patterns. As shownin FIG. 12, the wiring patterns 24 are arranged so as to connect latticepoints 27 on vertical dotted lines 25 and the horizontal dotted lines26, and are composed of vertical and horizontal straight lines andintersection points. The lattice points 27 are intersection points ofthe vertical dotted lines 25 and the horizontal dotted lines 26. Thevertical and horizontal pitches of the lattice points 27 are 0.2 μm.This pitch corresponds to the pitch of the wirings. The following methodis used to divide the wiring patterns 24 into vertical and horizontalcomponent patterns. The logic operation of the vertical dotted lines 25shown in FIG. 13A and the horizontal dotted lines 26 shown in FIG. 13Bis performed for the wiring patterns 24 so that overlapped portions ofthe patterns 24 and the dotted lines 25 and 26 are obtained. Theportions shown by thick solid lines in FIG. 13C are the overlappedportions 28 and 30 of the vertical dotted lines 25 and the patterns 24.The thick horizontal dotted lines 29 are the patterns 24 which are notoverlapped with the vertical dotted lines 25. Moreover, the portions 32shown by the thick solid lines in FIG. 13D are the overlapped portionsof the horizontal dotted lines 26 and the patterns 24. The thickvertical dotted lines 31 and 33 are the patterns 24 which are notoverlapped with the horizontal dotted lines 26. As shown in FIGS. 13Eand 13F, the thick solid lines 28, 30 and 32 which are the overlappedportions are extracted so as to be divided into three patterns 28, 30and 32.

[0153] (2) Next, at step S5 the patterns 28, 30 and 32 are subject to athickening process. As shown in FIGS. 14A and 14B, the divided patterns28, 30 and 32 are subject to the thickening process. At this time, athickening amount is set to the same value as the value obtained bysubtracting the wiring width (: 0.1 μm) from the lattice point pitch ofthe wiring patterns 24. Both sides of the patterns 28, 30 and 32 arethickened by the same amount, i.e., 0.05 μm (total: 0.1 μm). Accordingto this thickening process, as shown in FIGS. 14C and 14D, the wiringpatterns 28, 30 and 32 are converted into patterns 33, 34 and 35 havingpolygonal form.

[0154] (3) At step S6 the patterns 33, 34 and 35 which were subject tothe thickening process are divided into sizes of the basic figureapertures A1 or the like. Here, the thickened polygonal patterns 33, 34and 35 are divided into triangle and rectangle. The vertical componentpatterns are divided in the horizontal direction, and the horizontalcomponent patterns are divided in the horizontal direction. As shown inFIGS. 15A and 15B, the thickened polygonal patterns 33 to 35 are dividedinto rectangles 42, 44 and 47 and triangles 41, 43, 45, 46 and 48. Thewiring patterns 33 and 34 in the vertical direction are divided in thehorizontal direction, and the wiring pattern 35 in the horizontaldirection is divided in the vertical direction.

[0155] (4) At step S2 the divided patterns are classified according tothe basic figures A1 to A5 and B1 to B5 in the library shown in FIG. 4.The classification of the divided wiring patterns 41 to 45 in thevertical direction will be explained. At first, the wiring patterns 41to 45 are pattern-matched with the basic figures A1 to A5 shown in FIG.4. For example, as shown in FIG. 15C, the rectangular patterns 42 and 44are classified as the basic figure A5. Moreover, the triangular patterns43 and 45 are classified as the triangular basic figure A3, and thetriangular pattern 41 is classified as the triangular basic figure A2.Similarly, the wiring patterns 46 to 48 in the horizontal direction arepattern-matched with the basic figures B1 to B5, and as shown in FIG.15D, the rectangular pattern 47 is classified as the basic figure B5.The triangular pattern 46 is classified as the triangular basic figureB1, and the triangular pattern 48 is classified as the triangular basicfigure B3.

[0156] (5) At step S3 the logic operation of the classified basicfigures and the divided rectangular and triangular wiring patterns isperformed so that overlapped portions are obtained. The data B for beamon/off (93) of the second aperture array 3 are created. For example asshown in FIG. 16A, the rectangular pattern 42 has an overlapped portionin the range of lines L5 to L10 and the lows R1 to R2 with respect tothe basic figure A5. Therefore, as for the data B (93) relating to therectangular pattern 42, the display data showing non-deflection are setin the range of lines L5 to L10 and the rows of R1 and R2, and thedisplay data showing deflection are set in the range of the lines L1through 4 and rows R1 and R2 and the range of lines L1 to L10 and rowsR3 to R10. Here, as to where in the basic figure A5 to overlap thepattern 42, this is not limited to the case where the pattern 42 isarranged on the upper-right end position shown in FIG. 16A. Therefore,the pattern 42 may be arranged so as to be overlapped on the coordinateunits 19 of line L1 and row R1, line L1 and row R10, line L10 and rowR10, or the pattern 42 may be arranged under only the condition that itis overlapped any position.

[0157] In addition, as shown in FIG. 16B, the triangular pattern 43 hasan overlapped portion in the range of lines L5 to L10 and rows R5 to R10on the basic figure A3. Therefore, as the data B (93) relating to thetriangular pattern 43, the display data showing non-deflection are setin the range of lines L5 to L10 and rows R5 to R10, and the display datashowing deflection are set in the range of lines L1 to L10 and rows R1to R4 and the range of lines L1 to L4 and rows R5 to R10. Here, when thepatterns 42 and 43 which created the data B (93) explained withreference to FIGS. 16A and 16B are the patterns 42 and 43 in the area 33of FIG. 15C, the patterns 42 and 43 are combined with each other so asto be capable of being overlapped in the range of lines L5 to L10 androws R3 to R10 in FIG. 16B. In such a manner, one shot of the electronbeam can be emitted instead of the case where two shots of the electronbeams should be emitted.

[0158] (6) Meanwhile, the drawing data A (92) are composed of thedrawing positions 95 on the sample 7 (the arrangement positions of thedivided layouts in the whole layout of the semiconductor apparatus), thebasic figure names 95 classified at S2 according to the drawingpositions 95, and the addresses 96 for being capable of reading the dataB (93) set at step S3 according to the drawing positions 95. In such amanner, the exposure data 91, 97 and 98 are created as the drawing dataA (92) and the data B for the second aperture array control (93).

[0159] Next, the semiconductor apparatus is exposed based on theexposure data 91, 97 and 98. This exposure method is performed based onthe flow chart in FIG. 7 similarly to the first embodiment. At the timeof the exposure, the drawing data A (92) and the data B for the secondaperture array control (93) are used. These data 92 and 93 act upon theelectron beam exposure apparatus shown in FIG. 1 as follows. The data Bfor beam on/off (93) of the second aperture array 3 directly act uponthe second aperture array 3 so as to actuate the deflectors 10 foraperture sections 8 on the second aperture array 3. As a result, theelectron beam 9 having arbitrary form is emitted onto the third aperturearray 5. The drawing data A (92) control the first deflector 4 and isused when the basic figure aperture A1 or the like is selected.Simultaneously, the drawing data A (92) control the second deflector 6and the sample stand 73 and can carry out electron beam exposure on anarbitrary position of the sample 7. As a result, as shown in FIG. 17,synthesized images 55 to 62 of the second aperture array 3 and the thirdaperture array 5 are transferred onto the sample 7. As a result, theexposure of the wiring patterns 24 shown in FIG. 12 can be executed.

[0160] (Third Embodiment)

[0161] The third embodiment will explain the case where LSI typepatterns are used as the basic figures of the basic figure apertures.

[0162] In the third embodiment, the exposure apparatus used in the firstembodiment is used. The characteristic of the third embodiment is that alot of LSI type patterns 126 are arranged on the third aperture array(basic figure aperture array) 101 as shown in FIG. 18A. Here, the LSItype patterns 126 are patterns of parts composing an LSI circuit. TheLSI chip is designed so that several hundred kinds of standard cell (SC)patterns are combined according to applications and are arranged. Thethird embodiment will explain the case where the SC patterns are thetype patterns, namely, the basic figure patterns 126.

[0163] SC patterns 103 to 105 shown in FIG. 18B are arranged on onebasic figure pattern 102 in the plural basic figure patterns 126. FIG.18B is one example, and a plurality of SC patterns having differentforms (functions) are arranged in the basic figure patterns 126. The SCpattern 103 has patterns 106 to 108 such as gate electrode layer or thelike. The SC pattern 104 has patterns 109 to 111. The SC pattern 105 haspatterns 112 and 113. The SC patterns 103 to 105 compose SCs(units of SCpatterns) having respective simple functions. The basic figure pattern102 where the SC patterns 103 to 105 are connected also composes SCshaving more complicated function.

[0164] In the third embodiment, a second aperture array 114 shown inFIG. 19 can be used. The second aperture array 114 is also a blankingaperture array. The second aperture array 114 has aperture sections 115having electrodes 10 being capable of deflecting the electron beam 9.The ten aperture sections 115 are arranged in the horizontal direction,on lines L1 to L10. Needless to say, the second aperture array 3 shownin FIG. 2 used in the first embodiment may be also used. The array 114whose length cannot be adjusted in the vertical direction can be usedbecause the design is normal so that the vertical lengths of SCs becomeuniform.

[0165] Next, there will be explained below the exposure method accordingto the third embodiment. A Pattern 116 shown in FIG. 20A, for example,is exposed. The pattern 116 is composed of patterns 117 through. 122 and138.

[0166] First, similarly to the first embodiment, according to FIG. 6,the exposure data are created. However, in the third embodiment, thestep S1 and the step S2 are executed simultaneously. For example, thepattern 118 is selected, and the same pattern is retrieved from thebasic figure pattern 126. As a result, the pattern 107 of FIG. 18B isdetected. With this retrieval, the pattern 107 except for the SC pattern103 (102) may be occasionally detected. Next, the pattern 108 which isthe same as the pattern 119 adjacent to the pattern 118 detects thepattern 103 (102) which is adjacent to the previously detected pattern107. The above steps are repeated so that the pattern 102, which has thesame patterns 107 to 111 as the patterns 118 through 122, can bedetected.

[0167] Further, a judgment is made as to whether or not the same patternas the pattern 138 exists on the right side of the pattern 111 in thepattern 102. Since not the pattern 138 but the pattern 112 exists on theright side of the pattern 111, the judgment is made that the samepattern as the pattern 138 does not exist on the right side of thepattern 111 in the pattern 102.

[0168] Similarly, a judgment is made as to whether or not the samepattern as the 117 on the left side of the pattern 118 exists on theleft side of the 107. In such a manner, the same patterns as thepatterns 117 to 122 can be found from the patterns 106 to 111 in thepattern 102. This finding process corresponds to classification of thelayout 116 at step S1 of FIG. 6 according to the patterns 117 to 122 andthe pattern 138. Moreover, this finding procedure simultaneouslycorresponds to classification of the divided layouts 117 to 122 at stepS2 according to the basic FIG. 102 having the patterns 106 to 111.

[0169] The steps S1 and S2 are executed so that the drawing data 92 canbe created. The basic figure names of the data 94 for the third aperturearray of the drawing data 92 become identification symbol of the pattern102. The emitting positions are the patterns 106 to 111. Moreover, thedrawing position of the data 95 for sample is the arrangement positionof the pattern 116 in FIG. 20A. The address 96 may be determined whenthe data 93 are input.

[0170] Next, at step S3 the logic operation of the divided layouts 117to 122 and the basic FIG. 102 is performed. As a result, the on/offinformation, where the aperture sections 115 on the lines L1 to L7 arewhich are the on-area 123 which does not deflect the beam 9, is storedas the data 93 for the second aperture array control. Moreover, theon/off information, where the aperture sections 115 on the lines L8 toL10 are the off-area 124 which deflects the beam 9, may be stored. Here,the creation of the exposure data is ended.

[0171] Continuously, the latter of the exposure method is executed. Theexposure method is executed according to FIG. 7 similarly to the firstembodiment.

[0172] First, at step S11 the drawing position 95 of the pattern 116 inFIG. 20A is called. At step S12, the basic figure name of the pattern102 and the on/off information of FIG. 20B are called. The steps S13 toS16 are executed. The second aperture array 114 allows the beam to beemitted therethrough at only the necessary portion 123 as shown in FIG.20B, and deflects the beam at the other portion 124. As a result, asshown in FIG. 20C, the formed beam 125 is emitted only to the patterns106 to 111 on the SC pattern 102. As a result, the desired patterns 117to 122 shown in FIG. 20A can be exposed.

[0173] According to the third embodiment, the beam 9 is emitted only tothe desired areas 106 to 111 of the cell pattern 126 on the aperturearray 101, and the beam is not emitted to areas other than the desiredareas 106 to 111. As a result, the plural cell patterns 103 to 105 arecollective, and only the desired areas 103 and 104 are selected and thecell patterns are exposed. A number of the SC patterns arranged on theaperture array 101 can be reduced.

[0174] (Comparative Example of Third Embodiment)

[0175] As the comparative example of the third embodiment, FIGS. 21A and21B show arrangements of the CP apertures 128 and 133 on the CP aperturearrays 127 and 132 of the prior art.

[0176] In the case of the prior art shown in FIG. 21A, a beam 131 shapedby the first aperture is emitted onto a CP aperture 130. At this time,since the beam 131 is not emitted onto a CP aperture 129 which isanother SC pattern, it is necessary to provide a wide interval betweenthe SC patterns (apertures) 130 and the 129. For this reason, in thecase where the same number of the CP apertures 128 as the thirdembodiment are mounted, it is necessary to enlarge the CP aperture array127 and the beam deflection area.

[0177] In addition, when the CP aperture array 132 has the same size asthe third embodiment, as shown in FIG. 21B, only a small number of SCpatterns 133 (apertures) can be mounted. A beam 136 shaped by the firstaperture is emitted onto a CP aperture 135. At this time, since the beam136 is not emitted onto a CP aperture 134 which is another SC pattern,it is necessary to provide a wide interval between the SC patterns(apertures) 135 and the 134.

[0178] On the contrary, in the third embodiment, as shown in FIG. 18A, alot of SC patterns 126 can be arranged with narrow intervals.

[0179] (Fourth Embodiment)

[0180] The fourth embodiment will explain the case where the basicfigures of the basic figure apertures are oblique wiring patterns.

[0181] Also in the fourth embodiment, the exposure apparatus used in thefirst embodiment is used. The feature of the fourth embodiment is thatoblique wiring patterns 143 and 144 are arranged on a third aperturearray (basic figure aperture array) 142 as shown in FIG. 22B. Theoblique wiring pattern 143 is the oblique wiring pattern from the upperleft to the lower right. The oblique wiring pattern 143 has elevenapertures R1 to R11. The oblique wiring pattern 144 is the obliquewiring pattern from the upper right to the lower left. The obliquewiring pattern 144 has eleven apertures L1 to L11. Here, the obliquewirings are wirings which are arranged in the LSI layout so as to forman angle with a set base line which is not parallel nor vertical withthe base line. This base line may be a base line as a reference ofstepping presumed at the time of exposure. In FIG. 22B, respective sidesof the array 142 may be set as base lines. In this case, the obliquewiring patterns 143 and 144 are inclined 45° with respect to the baselines. However, the inclined angle is not limited to 45°, and may be 30°or 60°. Namely, the inclination can be set to an arbitrary angle.Moreover, some kinds of angles may be combined as to be 30° and 60°. Inthe LSI layout, in addition to the wirings which are parallel with orvertical to the base lines, the oblique wirings are provided. The thirdaperture array 142 of FIG. 22B also has aperture 145 for a VBS exposure.

[0182] Further, aperture sections 141 shown in FIG. 22A are formed onthe second aperture array 140 used in the fourth embodimentcorrespondingly to the forms of the oblique wiring patterns 143 and 144on the third aperture array 142. The aperture sections 141 and theoblique wiring pattern 143 can be arranged so as to establish apositional relationship shown in FIG. 23 due to reduction andenlargement. This positional relationship can be regarded as the samepositional relationship as FIG. 5A. Moreover, the aperture sections 141and the oblique wiring pattern 144 can be arranged so as to establishthe same positional relationship as FIG. 23 due to reduction andenlargement.

[0183] Next, there will be explained below the exposure method accordingto the fourth embodiment. For example, patterns 146 to 151 shown in FIG.24A are exposed. In the fourth embodiment, as shown in FIG. 24B, theexposure is divided into two shot areas 152 and 153, and the aperturesections 141 on the second aperture array 140 are individuallycontrolled so that the pattern 143 is exposed.

[0184] Similarly to the first embodiment, the exposure data are createdaccording to FIG. 6.

[0185] At step S1, the layout patterns 146 through 151 are divided intothe sizes of the basic figure apertures 143 and 144. As a result, asshown in FIG. 24B, the patterns 146 through 151 are divided in the areas152 and 153.

[0186] At step S2 since the divided layout patterns are oblique wiringsfrom the upper left to the lower right, they are classified as thepattern 143 for the oblique wiring from the upper left to the lowerright.

[0187] The steps S1 and S2 are executed so that the drawing data 92 canbe created. The basic figure names of the data 94 for the third aperturearray of the drawing data 92 are identification symbols of the pattern143. Moreover, the drawing positions of the data 95 for sample are anarrangement position of the patterns 146 to 151 in FIG. 24. The address96 may be determined when the data 93 are input.

[0188] Next, at step S3 the logic operation of the divided layouts 146to 151 and the basic FIG. 143 is performed. As a result, the on/offinformation 93, which shows that the aperture sections 141 on R4 and L4to L9, the aperture sections 141 on R6 and L2 to L11, the aperturesections 141 on R8 and L13 through L6 and the aperture sections 141 onR10 and L6 and L7 are on areas where the beam 9 is not deflected, isstored as the data 93 for the second aperture array control into thearea 152. Similarly, the on/off information is stored into the area 153,and the creation of the exposure data is ended.

[0189] Continuously, the latter half of the exposure method is executed.The exposure method is executed according to FIG. 7 similarly to thefirst embodiment.

[0190] First, at step S11 the drawing positions 95 of the patterns 146to 151 in FIG. 24A are called. At step S12 the basic figure name of thepattern 143 and the on/off information 93 are called. Steps S13 to S16are executed. As shown in the area 152 of FIG. 24B, the second aperturearray 140 allows the beam to transmit at necessary portions, and theother portions deflect the beam. The shaped beam is emitted only to R4,R6, R8 and R10 of the pattern 143. As a result, the oblique wiringpatterns 146 to 151 shown in FIG. 24A can be exposed.

[0191] (Modified Example of Fourth Embodiment)

[0192] The modified example of the fourth embodiment will explain thecase where the basic figures of the basic figure apertures are obliquewiring patterns.

[0193] In the modified example of the fourth embodiment, the exposureapparatus used in the first embodiment is used. The feature of themodified example of the fourth embodiment is that oblique wiringpatterns 163 and 164 are arranged on a third aperture array 162 as shownin FIG. 25B. The oblique wiring pattern 163 is an oblique wiring patternfrom the upper left to the lower right. The oblique wiring pattern 163has ten apertures R1 to R10. The oblique wiring pattern 164 is anoblique wiring pattern from the upper right to the lower left. Theoblique wiring pattern 164 has ten apertures L1 to L10. The thirdaperture array 142 shown in FIG. 25B has aperture 145 for a VSBexposure.

[0194] Further, aperture sections 161 shown in FIG. 25A are formed on asecond aperture array 160 to be used in the modified example of thefourth embodiment correspondingly to the forms of the oblique wiringpatterns 163 and 164 of the third aperture array 162. The aperturesections 161 and the oblique wiring pattern 163 can be arranged so as toestablish a positional relationship shown in FIG. 26 due to reductionand enlargement. This positional relationship can be regarded as thesame positional relationship as FIG. 5A. Moreover, the aperture sections161 and the oblique wiring pattern 164 can be also arranged so as toestablish a positional relationship shown in FIG. 26 due to reductionand enlargement.

[0195] Next, there will be explained below the exposure method accordingto the modified example of the fourth embodiment. Similarly to thefourth embodiment, the patterns 146 to 151 shown in FIG. 24A areexposed. In the modified example of the fourth embodiment, as shown inFIG. 27, the exposure is divided into four shot areas 166 to 169, andthe aperture sections 161 on the second aperture array 160 areindividually controlled so that the pattern 163 is exposed.

[0196] First, similarly to the first embodiment, the exposure data arecreated according to FIG. 6.

[0197] At step S1 the layout patterns 146 to 151 are divided into thesizes of the basic figure apertures 163 and 164. As a result, as shownin FIG. 27, the layouts are divided in the areas 166 to 169.

[0198] At step S2 since the divided layout patterns 146 to 151 areoblique wiring from the upper left to the lower right, they areclassified as the oblique wiring pattern 163 from the upper left to thelower right.

[0199] The steps S1 and S2 are executed so that the drawing data 92 canbe created. The basic figure name of the data 94 for the third aperturearray of the drawing data 92 is the identification symbol of the pattern163. Moreover, the drawing position and the address 96 of the data 95for sample may be determined similarly to the fourth embodiment.

[0200] Next, at step S3 the logic operation of the divided layouts 146to 151 and the basic FIG. 163 is performed. As a result, the on/offinformation 93, which shows that the aperture sections 161 on R1 and L4to L8 and the aperture sections 161 on R3 and L2 to L8 and the aperturesections 161 on R5 and L3 to L6 and the aperture sections 161 on R7 andL6 and L7 are on areas which do not deflect the beam 9, is stored as thedata 93 for the second aperture array control in the area 166, forexample. Similarly, the on/off information is stored in the areas 167 to169, and the creation of the exposure data is ended.

[0201] Continuously, the latter half of the exposure method is executed.The exposure method can be executed according to FIG. 7 similarly to thefourth embodiment. The beam 9 shaped by the second aperture array 160 isemitted only to R1, R3, R5 and R7 of the pattern 163. As a result, theoblique wiring patterns 146 to 151 shown in FIG. 24A can be exposed.

[0202] In such a manner, when some basic figure apertures to bereference are created, one basic figure aperture A1, 102, 143, 163 orthe like can be applied to a plurality of patterns according to the beamshape of the second aperture arrays 3, 114, 140 and 160. Moreover, theexposure data are divided into the drawing data A (93) and the data Bfor the second aperture array control (93) so that the exposure data 91can be compressed.

[0203] The first embodiment to the fourth embodiment 4 are not limitedto an acceleration voltage at the time of pattern exposure. In the firstembodiment to the fourth embodiment, the acceleration voltage at thetime of pattern exposure is 5 kV, but the acceleration voltage at thetime of pattern exposure may be a low energy electron beam of 5 kV orless. Moreover, similarly the embodiments 1 through 4 can be applied tothe case where the pattern exposure is carried out with the accelerationvoltage of 5 kV or more. Further, the first embodiment to the fourthembodiment are not limited to types of the electron beam exposureapparatus. For example, a CP exposure type electron beam exposureapparatus, a variable shaping type electron beam exposure apparatus,multibeam type electron beam exposure apparatus, a disc beam typeelectron beam exposure apparatus or an electron-beam mask transfersystem type electron beam exposure apparatus can be combined with thefirst embodiment to the fourth embodiment so as to be capable of beingused.

[0204] Various modifications will become possible for those skilled inthe art after receiving the teachings of the present disclosure withoutdeparting from the scope thereof.

What is claimed is:
 1. A charged beam exposure apparatus comprising: acharged beam generating source; a first flat board which has a pluralityof first aperture sections having rectangular apertures arranged closeto one another and electrodes for deflecting the beam passing throughthe first aperture sections at the respective apertures; and a secondflat board which is arranged parallel with said first flat board and hassecond aperture sections having basic figure apertures for shaping thebeam, which passes or passed through the first aperture sections.
 2. Thecharged beam exposure apparatus as in claim 1, further comprising: afirst deflector to emit the beam passed through the first aperturesections to the second aperture section; a second deflector to emit thebeam passed through the second aperture section to an arbitrary positionof a sample; and a lens to image the beam passed through the secondaperture section onto the sample.
 3. The charged beam exposure apparatusas in claim 1, wherein the first aperture sections are arrangedcyclically.
 4. The charged beam exposure apparatus as in claim 1,wherein said first flat board has the aperture sections and theelectrodes according to LSI wiring pitches.
 5. The charged beam exposureapparatus as in claim 1, wherein said second flat board has the basicfigures according to LSI wiring pitches.
 6. The charged beam exposureapparatus as in claim 1, wherein a ratio of a width of the firstaperture sections to an interval between the first aperture sections islarger than a ratio of a width of the second aperture sections to aninterval between the second aperture sections.
 7. The charged beamexposure apparatus as in claim 1, wherein a form of the apertures of thesecond aperture sections has linear wiring patterns in vertical andhorizontal directions.
 8. The charged beam exposure apparatus as inclaim 7, wherein a form of the apertures of the second aperture sectionsfurther has a connection pattern which connects vertical and horizontalwirings.
 9. The charged beam exposure apparatus as in claim 1, wherein aform of the apertures of the second aperture sections has a linearwiring pattern in a direction where a vertical direction and ahorizontal direction do not form a right angle.
 10. The charged beamexposure apparatus as in claim 1, wherein a form of the apertures of thesecond aperture sections has a standard cell pattern.
 11. The chargedbeam exposure apparatus as in claim 1, wherein the second aperturesections comprises: first slits which are arranged parallel withvertical sides of the rectangles and opposed to one another with equalintervals; and second slits which are arranged parallel with horizontalsides of the rectangles and opposed to one another with equal intervals.12. The charged beam exposure apparatus as in claim 11, wherein lengthsof the first slits are equal, and both end portions are arranged on aline, and their number is the same as a number of lines of the lattice.13. The charged beam exposure apparatus as in claim 11, wherein lengthsof the second slits are equal, and both end portions are arranged on aline, and their number is the same as a number of rows of the lattice.14. An exposure data creating method comprising: dividing layout data ofa semiconductor apparatus into sizes of basic figure apertures whichtake reduction in exposure into consideration; classifying the dividedlayouts according to the basic figure apertures; and creating first datawhich prevent a beam emitted onto overlapped portions of the dividedlayouts and the basic figure apertures from being deflected.
 15. Theexposure data creating method as in claim 14, further comprising:creating second data comprises positions of the divided layouts in thelayout of the semiconductor apparatus; names of the classified basicfigures; and addresses to be capable of reading the first data, whereinthe positions, the names and the addresses have correspondence to oneanother.
 16. An exposure data creating method comprising: dividing chipdata into units or sizes of standard cell patterns; classifying thedivided chip data according to the standard cell patterns in library;and obtaining overlapped portions of the divided chip data and theclassified standard cell patterns so as to create data which showsexistence/non-existence of deflection of a beam on a blanking aperturearray.
 17. An exposure data creating method comprising: dividing layoutdata of a semiconductor apparatus into vertical line patterns andhorizontal line patterns which take reduction in exposure intoconsideration; thickening widths of the vertical line patterns so as tocreate a first pattern where the adjacent vertical line patterns areintegrated; thickening widths of the horizontal line patterns so as tocreate a second pattern where the adjacent horizontal line patterns areintegrated; dividing the first and second patterns into sizes of basicfigure apertures which take reduction in exposure into consideration;classifying the divided first and second patterns according to the basicfigure apertures; and obtaining overlapped portions of the divided firstand second patterns and the classified basic figure apertures so as tocreate first data which show existence/non-existence of deflection foreach aperture sections on an aperture array.
 18. The exposure datacreating method as in claim 17, further comprising: creating second datacomprises positions of the divided first and second patterns in thelayout of the semiconductor apparatus; names of the classified basicfigures; and addresses to be capable of reading the first data, whereinthe positions, the names and the addresses have correspondence to oneanother.
 19. A recording medium to record exposure data being capable ofbeing read by a computer, the exposure data comprising: first data toprevent a beam emitted to overlapped portions of layout data of asemiconductor apparatus, which are divided into sizes of basic figureapertures which take reduction in exposure into consideration, and thebasic figure apertures for classifying divided layouts from beingdeflected.
 20. The recording medium for recording exposure data beingcapable of being read by a computer as in claim 19, the exposure datafurther comprising: second data which have positions of the dividedlayouts in the layout of the semiconductor apparatus, names of theclassified basic figure apertures and addresses for being capable ofreading said first data, and in which the positions and the names andthe addresses have correspondence to one another.
 21. A recording mediumfor recording a program for creating exposure data thereinto beingcapable of being read by a computer, the program comprising: dividinglayout data of a semiconductor apparatus into sizes of basic figureapertures which take reduction in exposure into consideration;classifying the divided layouts according to the basic figure apertures;and obtaining overlapped portions of the divided layouts and theclassified basic figure apertures so as to create first data which showsexistence/non-existence of deflection at aperture sections of anaperture array.
 22. The recording medium for recording a program forcreating exposure data capable of being read by a computer as in claim21, the program further comprising: creating second data comprisespositions of the divided layouts in the layout of the semiconductorapparatus; names of the classified basic figures; and addresses to becapable of reading the first data, wherein the positions, the names andthe addresses have correspondence to one another.
 23. A charged beamexposure method comprising: dividing layout data of a semiconductorapparatus into sizes of basic figure apertures which take reduction inexposure into consideration; classifying the divided layouts accordingto the basic figure apertures; and emitting a beam onto a sample, thebeam being shaped into a form of an overlapped portion of the dividedlayouts and the classified basic figure apertures.
 24. The charged beamexposure method as in claim 23, wherein said emitting onto the samplecomprises obtaining the overlapped portion of the divided layouts andthe classified basic figure apertures so as to create first data whichshows existence/non-existence of deflection at aperture sections on ablanking aperture array.
 25. The charged beam exposure method as inclaim 24, wherein said emitting onto the sample comprises creatingsecond data which have positions of the divided layouts in the layout ofthe semiconductor apparatus, names of the classified basic figures, andin which the positions and the names and the addresses havecorrespondence to one another.
 26. The charged beam exposure method asin claim 25, wherein said emitting onto the sample comprises: callingthe position; calling the name and the address of the basic figureswhich have correspondence to the called position; and calling the firstdata from the address.
 27. The charged beam exposure method as in claim26, wherein said emitting onto the sample comprises: applying a voltagefor deflection control to electrodes of blanking aperture array based onthe first data; applying a control voltage to a deflector for basicfigure selection based on the name of the basic figure; and applying acontrol voltage to a deflector for position specifying based on theposition.